1- Design the circuit shown in Fig.1 to establish a drain current of 0.3 mA and a drain voltage of 0.4 V. The MOSFET has V, 1 V, μnCox = 60 μA/V2, L-3 μm and W= 120 μm. 2- Consider the circuit shown in Fig. 2. Let Q, and Q: have V, = 0.6 V. Cox = 200 μA/V², L-L2 =0.8 μm, W, 8 μm and λ=0. (a) Find the value of R required to establish a current of 0.2 mA at the drain of Q. (b) Find W₂ and a new value for R; so that Q: operates in the saturation region with a current of 0.5 mA and a drain voltage of 1 V. VDD Rp Rz - 20 k V=-2.5 V Fig. 1 Vob-3V Fig. 2 w OVD