4. A planar Si p-n junction diode at 300K has a p- side doping of NA= 1018 cm³, an n-side doping of ND=2×1016 cm³, and an n-side thickness of Xn = 2.2μm. Determine the voltage VA required to completely deplete the n-side of the diode (xn=Xn). p-region " " • " To=300K; n₁ =1010cm³. E=8.85×10-12 F/m. 80 = 11.7 " KB ■ 1.38×10-23 q=1.6.10-19C Use the following formulas: 2εεο xn = (Vbi - VA) qND (1+ ND/NA) n-region -Xp 0 Xn Xn and Vbi = q KoT In (NDNA)