Consider an npn bipolar transistor with the following characteristics Emitter Base Collector Nd=1018 cm-3 Na = 5 x 1016 cm-3 Nd=1015 cm = DE 8 cm²/sec (diff. coef.) DB = 15 cm²/sec DC = 12 cm²/sec TCO = 10-7 sec xB=0.7 μm (Base width) TEO 10-8 sec (life time) = XE 0.8 μm (emitter width) TB0 = 5 x 10-8 sec (Remember D/m=KT/q, and Lp = √√Dn.pn.p) A forward bias of 0.5 V is applied to the emitter-base junction and a reverse bias of 5 V to the collector-base junction. Given cross sectional area of 104 cm²: 1) Sketch the energy band diagram of the transistor showing the Fermi levels and barrier heights (Note: you need not calculate depletion widths). 2) Calculate IE, IC, and IB. 4. Calculate a and B. 5. With the value of ẞ you have calculated, draw a set of Ic vs VCE curves for this transistor for IB, 2xlB and 4x1B. Mark the axes and give values.