Consider an npn bipolar transistor with the following characteristics Emitter Base Collector Nd=1018 cm-3 Na = 5 x 1016 cm-3 Nd=1015 cm-3 DE = 8 cm²/sec (diff. coef.) TEO 10-8. = DB = 15 cm²/sec DC = 12 cm²/sec sec (life time) TB0 = 5 x 10-8 sec TCO = 10-7 sec = XE 0.8 μm (emitter width) XB 0.7 μm (Base width) (Remember D/μ=KT/q, and Ln.p=√√D.pn.p) A forward bias of 0.5 V is applied to the emitter-base junction and a reverse bias of 5 V to the collector- base junction. Given cross sectional area of 104 cm²: 1. Sketch the energy band diagram of the transistor calculating the location of Fermi levels and barrier heights (Note: you need not calculate the depletion widths). (8 pts) 2. Calculate IE, Ic, and IB. (12 pts) 3. Calculate ẞ. (5 pts) 4. With the value of ẞ you have calculated, draw a set of Ic vs VCE curves for this transistor for IB, 2xlB and 4xlB. Mark the axes and give values. (5 pts)