An n-channel MOSFET circuit shown in the figure is fed by a gate voltage VG and VDD=5V. Drain resistance RD=2k. The p-type substrate of the MOSFET is doped by 1015 acceptor ions. The effective electron mobility in the channel when it is created is 820cm²/V-s. The oxide thickness is xo=30nm with dielectric constant Ko=3.9. Also the channel length L=500nm and the depth of the device is, Z=5μm. a. Calculate the threshold voltage to create n-channel b. Calculate the output voltage, VD, for gate voltages VG= 0.5V & 1V. Specify at which mode the MOSFET is working for these gate voltages GND n c. At which mode the MOSFET will operate for gate voltage, VG 5V. Develop a simple equation to solve the output voltage, VD, under this mode. VG VDD=5V RD VD n' P-Si GND