BIASED P-N JUNCTION A silicon abrupt p-n junction diode with Na = 2 x 1016 /cm³ and Nd = 5 x 1016/cm³ is FORWARD BIASED, with Va = 0.5 V, at room temperature. Given that KT/q=0.0259 V, n₁ = 1 x 1010 /cm³, and Єr for Silicon = 11.8 x €0 a) Calculate the built-in potential bi = Vbi and the voltage drop across the junction region (Vbi - Va). b) Sketch the energy band diagram. Use the given grid paper, and place the n-type material on the left side, and the p-type on the right side, and Define the position of each energy level. [Hint: sketch the EBD under equilibrium, then adjust it for the forward bias, as required] c) Sketch the net charge density (p in C/cm³), on the same sheet as part (b) d) Sketch the electric field (ε(x)), on the same sheet as part (c), and Determine Єmax e) Sketch the CHARGE CARRIERS distribution, on the same sheet as parts (b, c, d), indicating the values of the minority carriers at the edges of the depletion regions (Xp and -Xn) with Va = 0.5V f) Sketch the current components (Jn, Jp, and JTotal) due to the majority and the minority carriers, with respect to the position (x-axis), on the same sheet as parts (b, c, d, e) g) Calculate the Width of the depletion region (W), with Va = 0.5 V h) Calculate the Junction capacitance per unit area (Cj), in F/cm², with Va = 0.5 V i) Sketch the current-voltage characteristics of the Diode (I (on the y-axis) and Va on the x-axis) j) If the P-N is reverse biased with Va = -0.5 V, What is the new Cj value? k) If the reverse bias voltage increases, Calculate the Breakdown Voltage (VBD), given the Dielectric Strength= Emax = 1.5 x 105 V/cm what is the possible breakdown mechanism