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categoryهندسة كهربائية schoolبكالوريوس event_available2026-07-13

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= D **9.104 Consider the BiCMOS amplifier shown in Fig. P9.104. The BJT has | VBE| = 0.7 V, B = 200, Cμ 0.8 pF, and fr=600 MHz. The NMOS transistor has V, = 1 V, kW/L = 2 mA/V2, and C = C = 1 pF. (a) Consider the dc bias circuit. Neglect the base current of Q2 in determining the current in Q₁. Find the dc bias currents in Q, and Q2, and show that they are approximately 100 μА and 1 mA, respectively. (b) Evaluate the small-signal parameters of Q, and Q₂ at their bias points. (c) Consider the circuit at midband frequencies. First, deter- mine the small-signal voltage gain V/V. (Note that Rc can be neglected in this process.) Then use Miller's theorem on RG to determine the amplifier input resistance R. Finally, determine the overall voltage gain V/V sig V sig +5 V w 3 ΚΩ C₁₂ RG = 10 ΜΩ w -OV 100 ΚΩ C₁ 1 µF V₁ O Q1 1 ΚΩ 0.1 µF Q2 Rin 6.8 ΚΩ

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