V₁ BB+ 2.5 V Re≥500 RB Voc ww 18 ΚΩ Boc-200 Figure 3 The transistor has the following ratings: PD (max) = 650 mW. VCE (max) = 40 V. and IC(max) = 200 mA. 20) Refer to Figure 3. The maximum value that VCC can be adjusted to without exceeding the VCE(max) rating is (ignore other max ratings). A) 60 V B) 40 V C) 45 V 21) Refer to Figure 3. If VCC is set to 48 V. PD(max) is exceeded by A) 110 mW B) 80 mW 20 D) 50 V 21) C) 310 mW D) 55 mW 22) C) in the linear range 23) C) Av D) PD(max) 22) Refer to Fig 3. Assume VCC is lowered to 15 V. The transistor is A) cutoff B) saturated 23) The symbol hFE means the same as B) BDC A) DC 24) HFE varies with A) temperature B) collector current C) both A and B D) none of the above 25) A 10 mV ac signal is applied to the base of a properly biased transistor with RC = 1.2k and r = 36. The output ac voltage is A) 152 mV B) 33 mV C) 333 mV D) 105 mV 24) 220 25) VBB 4.0 V RB ww Κ Ε 1.5 ΚΩ Vcc=15 V Poc=100 Figure 4 26) Refer to Figure 4. Assume RB-22 kg. The collector current will be approximately A) 10 mA B) 5 mA C) 20 mA 27) Refer to Figure 4. The largest base resistor that will still saturate the transistor is approximately Α) 33 ΚΩ Β) 330 ΚΩ 28) Refer to Figure 4. If RB-100 k2, Vc is approximately A) 12.5 V B) 10 V C) 40 k C) 7.5 V 26) D) 27 mA 27) D) 400 k 28) D) 5 V 29) 29) Refer to Figure 4. If you wanted to change the transistor to a pnp type, you need to A) increase the base resistor B) increase the collector resistor C) change both de sources to negative supplies D) all of the above