Problem 4 (25 points). An n-channel MOSFET has the following parameters: Oxide thickness tox=350 Å, gate length L = 2 μm, gate width W = 30μm, electron mobility μn = 450 cm²/V.sec, oxide = 3.9 (8.85x10-14) F/cm and threshold voltage VT = 0.80 V. 1. Calculate VDS(sat) for VGs = 0,1, and 3 V; and the corresponding drain current and ID(sat) 2. Find ID for Vos = 0.5, and 4 V, for these values of VGs. 3. Draw ID vs VDs for these values of VGs carefully noting VGS, VDS(sat) and IDS values at point you have calculated.