6.5 The energy band diagram characterizing a uniformly doped Si sample maintained at room temperature is pictured Fig. P6.5. (a) Sketch the electron and hole concentrations (n and p) inside the sample as a function of position. (b) Sketch the electron and hole diffusion current densities (IN lcliff and Jp lain) inside the sample as a function of position. (c) Sketch the electric field (%) inside the semiconductor as a function of position. (d) Sketch the electron and hole drift current densities (IN Idrift and Jp Idrift) inside the sample as a function of position. 0 Figure P6.5 Ec FN Ei FP EN L