(e) The electron mobility in a silicon sample is determined to be 1300 cm2/ V-sec at room temperature. What is the electron diffusion coefficient? (f) What is the algebraic statement of low level injection? (g) Light is used to create excess carriers in silicon. These excess carriers will predominantly recombine via (choose one: direct thermal, R-G center, or photo) recombination. (h) Prior to processing, a semiconductor contains ND = 1014/cm3 donors and NT = 10¹¹/cm3 R- G centers. After processing (say in the fabrication of a device), the semiconductor sample contains ND=10¹/cm3 donors and Nr = 10%/cm3 R-G centers. Did processing increase or decrease the minority carrier lifetime? Explain.