5. The energy band diagram for an ideal MOS-capacitor operated at T= 300 K is sketched as follows. The semiconductor band is such bended that EFS-E; at the Si/SiO2 interface, and the Fermi level of the metal is aligned with the valence band of the semiconductor in the Si bulk. Ec 0.56 eV E₁ 0.26 eV EFS Ev EFM (a) Calculate OF, Os, VG, Adox, depletion width and oxide thickness; (b) Draw the block charge diagram for the MOS-C corresponding to the state pictured in the energy band diagram; (c) Sketch the electric field inside the oxide and the semiconductor as a function of position; (d) Sketch the general shape of the low-frequency C-V characteristic for this MOS- capacitor.