(1) A semiconductor device is characterized by the idealized energy band diagram in the figure below. It is also known that EG = 1.12 eV, n₁ = 1010 cm³, and kT = 0.0259 eV. Also, μn = 1345 cm² V-1 - sec-1 and Hp = 458 cm² V-1 - sec¨¹ at both x = xa and x = xb. (a) Using a drawing program, sketch the electrostatic potential (V) inside the semiconductor as a function of x. Set V0 at x = xa. (b) Using a drawing program, sketch the electric field (E) inside the semiconductor as a function of x. (c) What is the magnitude of the electron drift current density (JN|drift) at x = xa? Explain. (d) Is there an electron drift velocity at x=xb? If there is a drift current, what is the direction of the current flow? (e) Is there an electron diffusion current and x = x? If there is a diffusion current, what is the direction of the current flow? (f) What is the magnitude of the total current density () at x = xb? Explain. E₁ Ec EF Ex x x = Xb x = x x = xa E₁ = EF here