A si pn-junction has a cross sectional area of 1x10 cm², at 300 Ka forward bias voltage of 4 V results in 1.7x1016 cm excess holes at the edge position of the depletion region in the n-side of the junction, assuming a hole lifetime of 1 us, then the hole current at a penetration depth of 5 μm in the neutral n-region will be: 8.840e-6 A 6.188e-5 A 2.917e-6 A O 1.887e-8 A 6.453e-6 A