OE. 9.22e-4 cm of An intrinsic Si semiconductor sample has a length of L=20 um, at 300 K the sample is optically excited resulting in 1×1020 cm³ excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of 10 V, the change of sample resistance will be: A. 0.001800 Ohms B. 0.004500 Ohms O C. 156.2 Ohms OD. 1.620e6 Ohms E. 1.620e4 Ohms