Al/NdF,/SIOJSI 225 High frequency capacitance versus voltage plots for a metal-insulator-semiconductor (MIS) structure are shown at the right (NdFs and SiO2 comprise the insulator). Four voltage sweeps are indicated where the bias is applied to the aluminum metal. The first sweep starts at +5 volts and ends at -5 volts, the second sweep is in the opposite direction, and the third and fourth voltage sweeps repeat this cycle. a) Calculate the equivalent oxide thickness of the NdFs/SiO2 dielectric. The diameter of the aluminum metal dot is 1 mm and the relative permittivity of SiO2 is 3.9. Show your work, and give your answer in units of nanometers. Capacitance (pF) 200 175 150 125 100 75 78 50 25 25 -2 -1 D 1 2 3 Voltage (volts)