The conceptual schematic of a semiconductor temperature sensor is shown in Figure 357 where two identically processed silicon pn-junction diodes (D1 and D2) are used. The constant current sources ID1 and ID2 have equal values unaffected by temperature. Diode D2 has an area factor 10 times larger than that of diode Di as indicated by the *10x next to D2. Assuming both diodes are nearly ideal with zero bulk resistance (rs = 002) and equal emission coefficients (n) of 1.1, you are asked to do the following. (a.) Derive the temperature-dependent equation for the voltage Vo. Express the equation for Vo(T) in terms of known semiconductor device constants and parameters. Indicate the nature of the temperature dependence (that is, linear, quadratic. exponential, etc.). Does this concept represent a reasonable method for measuring temperature? (b.) Calculate the value of Vo(T) at room temperature (300°K) and for a 30°C increase above room temperature. ID1 VD1 D₁ 1x +Vcc + Vo ID2 D2 VD2 10x Figure 357 Diode temperature sensor