Problem 1 An n-channel MOSFET has an electron mobility value of μN= 560 cm²/volt-sec and uses a gate oxide with thickness of tax = 90A. The gate voltage is given as VGS = 2.5V, and the threshold voltage VT = 0.65 V. Assume that x = 3.45x10¹³ F/cm. a) Calculate the oxide capacitance per unit area, Cor, of the device. b) Find the gain factor of the device', B., if the FET has channel length L = 0.25 μm and width W = 2 μm. c) Now recompute the gain factor for a FET with W=4 μm and the same channel length. What impact does doubling the transistor width have on the transistor characteristics? State clearly any assumption you make.