The inversion layer charge is given by: Qn (y)= = Coz (VG-VT - V(y)) for VD ≤VDeat where y is the coordinate along the channel from source (y = 0) to drain (y = L). Derive the expression for electric field along the channel, &(y), for the case where VDVDsat. Write the expression in terms of gate voltage, (V_G), threshold voltage (V_T), drain current (I_D), channel length (L), channel width (W), mobility (mu), oxide capacitance (C) and the position along the channel (y). Hint: Start with the inversion layer charge Qn(y) expression above, write down the expression for drift current and BV (y) integrate over y to obtain V (y). You can then obtain the electric field by taking the derivative, ε(y) = ду 18. Simplify the answer of Problem 17 for the case where the transistor is at the edge of saturation, VD expression for IDs. Observe what happens at the end of the channel, y = L. Enter math expression here = VDsat by using the 1 point