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categoryالهندسة الكهربائية schoolبكالوريوس event_available2026-07-15

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1. Design the transistor inverter of Fig. 11-4 to operate with a saturation current of 8 mA using a transistor with a beta of 100. Use a level of IB equal to 120% of IB (max) and standard resistor values. Voc +5V R V f R V₁ www B=100 Fig. 11-4 2. Verify that the circuit shown in Fig. 11-5 is a positive NAND when the input switches between 0 V and +12 V. Neglect source impedance and junction saturation voltages and diode voltages in forward direction. Find the minimum value of ẞ. Vcc +12V A +127 Rc2.2k R₁≤15k V D₁ R₂ ww 15k R₁100k Fig. 11-5 -12V

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