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categoryالهندسة الكهربائية
schoolبكالوريوس
event_available2026-07-15
السؤال
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Question 5
20 pts
For a n+pn BJT with the doping of:
Emitter: Nd=1018 cm 3, Base: Na = 2 x 1016 cm³, Collector: Nd = 1015 cm 3.
(a) For device at normal operation, with emitter junction forward biased at 0.5V, collector junction reverse biased at -5V.
Calculate the minority carrier concentrations at the two sides of the emitter junction depletion region.
(b) Sketch one same graph to show the minority carrier concentrations for all three regions at equilibrium, and at above bias
conditions.
(c) Draw the energy band diagrams for the BJT at equilibrium and at given bias conditions.
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