Question one: 4 n-JFET with cannel dimensions are: width [2a] 4μm, length 17.9 µm & thickness 200 μm and doping concentration is 4.7 x 10¹5 cm³. Calculate drain saturated current & voltage at gate voltage - 3 V ? if you knew that electron mobility is 4000 cm²/V.s and relative permittivity of Ga is 16.2.