In a particular semiconductor material, the effective density of states functions are given by N = Neo (T/300) 3/2 and N₁ = No (T/300)3/2 where Noo and No are constants independent of temperature. Experimentally determined intrinsic carrier concentrations are found to be n; = 1.40 × 102 cm³ at T = 200 K and n; = 7.70 x 1010 cm at T 400 K. Determine the product Neo No and the bandgap energy Eg. (Assume Ęg is constant over this temperature range.) = .