1- Design the circuit shown in Fig.1 to establish a drain current of 0.3 mA and a drain voltage of 0.4 V. The MOSFET has V, 1 V, Cox = 60 μA/V2, L = 3 μm and W= 120 μm. %1.10 ۲:۲۱ م HW_6 King Saud University Electrical Engineering EE 310 Microelectronic Devices and Circuits Home Work-6 4G Riyadh Season III. كهر. 310-EE 1- Design the circuit shown in Fig.1 to establish a drain current of 0.3 mA and a drain voltage of 0.4 V. The MOSFET has V, 1 V. Hn Cox 60 μA/V2, L-3 μm and W120 μm. 2- Consider the circuit shown in Fig. 2. Let Q, and Q₂ have V₁ = 0.6 V, Cox = 200 μA/V², L=L₂ =0.8 μm, W, 8 μm and λ=0. (a) Find the value of R required to establish a current of 0.2 mA at the drain of Q. (b) Find W, and a new value for R; so that Q: operates in the saturation region with a current of 0.5 mA and a drain voltage of I V. VDD = +2.5V ID V=-2.5 V Fig. 1 => R₂ = 20 ks Voo-3 V Fig. 2 w OVD