ETEN2001 Homework 11 3. The transistor in the circuit shown below has parameters Vry = 0.4 V, KI = 0.5 mA/V² and λ= 0. The circuit parameters are VDD = 3 V and R₁ = 300 k2. (a) Design the circuit such that Ipo = 0.25 mA and Vosg = 1.5 V. (b) Determine the small-signal voltage gain and the output resistance Ro. VDD ANS: (a) Rs = 6 k2, R = 345.2 k2, R2=2291 k2 (b) A. = 0.809, Ro= 1.14 ks2 4. The small-signal parameters of the NMOS transistor in the ac equivalent common-gate circuit shown below are VTN = 0.4 V, K = 4 mA/V2 and 2 = 0. The quiescent drain current is IDQ = 0.5 mA. Determine the small-signal voltage gain and the input resistance. R₁ ANS: A,, = 11.3, R;= 341.3 2 10 ΚΩ ww 4 ΚΩ 5. The parameters of the circuit shown below are V+ = 3.3 V, V = -3.3 V, RG = 50 kQ, RL = 4 k2, Rs; = 0, and Io = 2 mA. The transistor parameters are Vrv = 0.6 V, K = 4 mA/V² and λ= 0. (a) Find RD such that Vpsg = 3.5 V. (b) Determine the small signal parameters g and Ri. (c) Find the small-signal voltage gain Av. Rsi CCI RG CC2 Ve RL ANS: (a) Rp 553.5 2 (b) gm = 5.66 mA/V, R = 177 2 (c) 2.75