An ideal n channel MOSFET has the following parameters a. W=30 μm L=2 μm Vt=0.80 V = In = 450 tox 350 angstoms Plot ID vs. VDs for 0 ≤ VDs ≤ 5V and for VGs = 0,1,2,3,4,5 V. Indicate on each curve the Vds(sat) point. mmm! b. Plot √√(sat) vs. VGs for 0 ≤ VGS ≤ 5 V C. Plot ID vs VGs for VDs = 0.1 V and for 0 ≤ VGs ≤ 5V