4.56 (a) Determine the position of the Fermi energy level with respect to the intrinsic Fermi level in silicon at T = 300 K that is doped with boron atoms at a concentration of N₁ = 2 × 1016 cm³. (b) Repeat part (a) if the silicon is doped with phosphorus atoms at a concentration of N₁ = 2 × 10 16 cm³. (c) Calculate no and po in parts (a) and (b).